Method for manufacturing semiconductor device

摘要

An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.

主权项

1. A manufacturing method of a semiconductor device comprising the steps of:
forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming an oxide semiconductor layer over the first insulating layer so that the oxide semiconductor layer overlaps with the first conductive layer; forming a second conductive layer over the oxide semiconductor layer; forming a second insulating layer to cover the oxide semiconductor layer and the second conductive layer; forming a pixel electrode layer electrically connected to the second conductive layer; forming a third insulating layer over the second insulating layer and the pixel electrode layer; performing a first heat treatment after the step of forming the oxide semiconductor layer and before the step of forming the second insulating layer; and performing a second heat treatment after the step of forming the second insulating layer and before the step of forming the pixel electrode layer, wherein the oxide semiconductor layer includes a region where a hydrogen concentration is higher than a hydrogen concentration in the second insulating layer.