| 发明名称 | Method for constructing an electrical circuit, and electrical circuit | ||
| 摘要 | A method for constructing an electrical circuit that includes at least one semiconductor chip encapsulated with a potting compound is disclosed. The method includes applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit including the at least one semiconductor chip. | ||
| 申请公布号 | US8993356(B2) | 申请公布日期 | 2015.03.31 |
| 申请号 | US201113232088 | 申请日期 | 2011.09.14 |
| 申请人 | Robert Bosch GmbH | 发明人 | Pirk Tjalf;Butz Juergen;Franke Axel;Haag Frieder;Weber Heribert;Hoechst Arnim;Knies Sonja |
| 分类号 | H01L21/00;H01L23/31;H01L21/56;H01L23/58;H01M6/40;H01M10/04;H01M10/0525;H01L23/00;H01L23/538;H01L25/065 | 主分类号 | H01L21/00 |
| 代理机构 | Maginot, Moore & Beck LLP | 代理人 | Maginot, Moore & Beck LLP |
| 主权项 | 1. A method for constructing an electrical circuit comprising at least one semiconductor chip encapsulated with a potting compound, comprising: applying a galvanic layer arrangement for forming an electrochemical element on an element of the electrical circuit having the at least one semiconductor chip; wherein the applying step is carried out before, after or in parallel with a step of fitting the at least one semiconductor chip by a contact side thereof to a carrier substrate, a step of encapsulating the at least one semiconductor chip on the carrier substrate with a potting compound, a step of detaching the carrier substrate from the at least one semiconductor chip, wherein the contact side of the at least one semiconductor chip is uncovered, and/or a step of forming a wiring layer on a contact side of the at least one semiconductor chip. | ||
| 地址 | Stuttgart DE | ||