Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices

摘要

Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.

主权项

1. A method of processing a substrate comprising:
depositing a silicon oxide layer on a substrate having a germanium or III-V semiconductor surface; depositing a tantalum oxide layer on the silicon oxide layer; and diffusing the tantalum oxide layer into the silicon oxide layer to provide a tantalum silicate layer having a Si/(Ta+Si) ratio in the range from about 0.01 to about 0.15.