| 发明名称 | Interconnect structure and method for forming the same | ||
| 摘要 | A interconnect structure includes a first etch stop layer over a substrate, a dielectric layer over the first etch stop layer, a conductor in the dielectric layer, and a second etch stop layer over the dielectric layer. The dielectric layer contains carbon and has a top portion and a bottom portion. A difference of C content in the top portion and the bottom portion is less than 2 at %. An oxygen content in a surface of the conductor is less than about 1 at %. | ||
| 申请公布号 | US8994178(B2) | 申请公布日期 | 2015.03.31 |
| 申请号 | US201213475581 | 申请日期 | 2012.05.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Shih Po-Cheng;Yang Hui-Chun;Sun Chih-Hung;Liou Joung-Wei |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L21/768;H01L23/485;H01L23/522;H01L23/532 | 主分类号 | H01L23/48 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A device, comprising: a substrate; a first etch stop layer over the substrate; a dielectric layer having a top portion and a bottom portion over the first etch stop layer, wherein the top portion and the bottom portion comprise different carbon (C) contents, and a difference of C content in the top portion and the bottom portion is less than 2 at %; a conductor in the dielectric layer, wherein an oxygen content in a surface of the conductor is less than about 1 at %; and a second etch stop layer over the top portion of the dielectric layer, wherein a thickness of the top portion of the dielectric layer is about 1% to about 5% of a thickness of the dielectric layer. | ||
| 地址 | TW | ||