Method of manufacturing semiconductor device

摘要

An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

主权项

1. A light-emitting device comprising:
an organic compound film; an inorganic insulating film over the organic compound film; a first electrode over the inorganic insulating film; a light-emitting layer over the first electrode; a second electrode over the light-emitting layer; an adhesive layer over the second electrode; a flexible substrate over the adhesive layer; and an integrated circuit between the organic compound film and the adhesive layer.