| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in area of a contact hole and reduce a process load in a thin film transistor array substrate of a structure having a flatness film, and obtain stable contact resistance.SOLUTION: A pixel electrode 8 of an array substrate 110 is connected to a drain electrode 6 of a Thin Film Transistor (TFT) 10 via: a first aperture H1 that is formed in a second inter-layer insulation film 12; a second aperture H7 that contains a bottom part of the first aperture H1, and is formed in a common electrode 7; a third aperture H8 that contains at least a part of the bottom part of the first aperture H1, is contained in the second aperture H7, and is formed in a third inter-layer insulation film 13; and a fourth aperture H4 that is formed in a first inter-layer insulation film 11 in an area where the third aperture H8 and the bottom part of the first aperture H1 are overlapped. |
