| 摘要 |
PROBLEM TO BE SOLVED: To improve luminous efficiency of a group III nitride semiconductor light-emitting element.SOLUTION: A p-electrode 16 comprises a wire bonding part 16a connected to a wire, a wiring-like part 16b extending from the wire bonding part 16a in a wiring shape, and a contact part 16c connected to the wiring-like part 16b and being in contact with a translucent electrode 14 via a hole 21. A current blocking layer 18 is provided in a predetermined region between a p-layer 13 and the translucent electrode 14. The current blocking layer 18 is made of a material which has insulating properties and translucency and whose refractive index is lower than that of the p-layer 13. The predetermined region is a region including the contact part 16c in a plan view. The current blocking layer 18 is not provided in regions overlapping the wire bonding part 16a and the wiring-like part 16b. The shape of the current blocking layer 18 is wider than that of the contact part 16c by 0-9 μm. |
