发明名称 |
SOI WAFER MANUFACTURING METHOD AND BONDED SOI WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide an SOI wafer manufacturing method which can deposit a polycrystalline silicon layer so as not to promote single crystallization even when a heat treatment process is performed.SOLUTION: An SOI wafer manufacturing method by bonding via an insulation film, a bond wafer and a base wafer, each of which is composed of a silicon single crystal at least comprises: a process of forming a polycrystalline silicon layer on a bonded surface side of the base wafer; a process of forming an insulation film on at least one of a surface of the polycrystalline silicon layer and the bonded surface of the bond wafer; a process of bonding the base wafer and the bond wafer via the insulation film; and a process of thinning the bonded bond wafer to form an SOI layer, in which a wafer having resistivity of 100 &OHgr;cm and over and surface roughness of a surface where the polycrystalline silicon layer is formed is 2 nm and over is used as the base wafer. |
申请公布号 |
JP2015060887(A) |
申请公布日期 |
2015.03.30 |
申请号 |
JP20130192264 |
申请日期 |
2013.09.17 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
KOBAYASHI NORIHIRO;TOBE TOSHIMI |
分类号 |
H01L21/02;H01L21/265;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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