SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device composed of a GaN-based semiconductor that allows integrating a transistor and a diode into one chip.SOLUTION: A semiconductor device 100 includes: a first-conductivity-type first GaN-based semiconductor layer 12; a first-conductivity-type second GaN-based semiconductor layer 14 provided on the first GaN-based semiconductor layer 12; a second-conductivity-type third GaN-based semiconductor layer 16 provided in a partial region on the second GaN-based semiconductor layer 14; a first-conductivity-type fourth GaN-based semiconductor layer 18 provided on the third GaN-based semiconductor layer 16; a gate insulating film 20 provided on the second GaN-based semiconductor layer 14, the third GaN-based semiconductor layer 16, and the fourth GaN-based semiconductor layer 18; a gate electrode 22 provided on the gate insulating film 20; a first electrode 24 provided on the fourth GaN-based semiconductor layer 18; a second electrode 26 provided on a rear-surface side of the first GaN-based semiconductor layer 12; and a third electrode 28 provided on the second GaN-based semiconductor layer 14.