| 摘要 |
<p>The present invention relates to a semiconductor light emitting device. According to an embodiment, the semiconductor light emitting device includes: a laminate having a light emitting layer; first and second electrodes which are formed on the laminate; an insulation layer which covers the laminate, the first and second electrodes; a first wire which is connected electrically to the first electrode; a second wire which is connected electrically to the second electrode; and a shielding part which covers the side of the laminate. The first and second wires, and the shielding part include a member having refractive ratio to be more than 80 % for the radiation light of the light emitting layer on a side to be faced with the insulation layer.</p> |
