| 发明名称 |
CONTACT STRAP FOR MEMORY ARRAY |
| 摘要 |
Devices and methods for forming a device are disclosed. The method includes providing a substrate having a memory array region. Front end of line (FEOL) process is performed to form components of memory cell pairs. The FEOL process forms storage gates, access gates or word lines, source/drain regions, spacers, erase gates and source line isolation dielectrics. The memory cell pair shares a common source line (SL). A SL strap opening is provided. The source line strap opening is formed between adjacent memory cell pair. The source line strap opening does not overlap the storage gate of the memory cell. |
| 申请公布号 |
US2015087123(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414491981 |
申请日期 |
2014.09.20 |
| 申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
WU Ling;YANG Jianbo;LIM Kian Hong;JUNG Sung Mun |
| 分类号 |
H01L21/768;H01L27/115;H01L29/423 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a device comprising:
providing a substrate having a memory array region; performing front end of line (FEOL) process to form components of memory cell pairs, wherein the FEOL process forms storage gates, access gates or word lines, buried source lines, spacers, erase gates and source line isolation dielectrics, and wherein a memory cell pair shares a common source line (SL); providing a SL strap opening, wherein the source line strap opening is formed between adjacent memory cell pair, wherein the source line strap opening does not overlap the storage gate of the memory cell. |
| 地址 |
Singapore SG |
