| 发明名称 |
SEMICONDUCTOR PHOTO-DETECTING DEVICE |
| 摘要 |
A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure. |
| 申请公布号 |
US2015084061(A1) |
申请公布日期 |
2015.03.26 |
| 申请号 |
US201414496998 |
申请日期 |
2014.09.25 |
| 申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
PARK Ki Yon;KIM Hwa Mok;LEE Kyu-Ho;LEE Sung Hyun;KIM Hyung Kyu |
| 分类号 |
H01L31/108;H01L31/18;H01L31/0304 |
主分类号 |
H01L31/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photo-detecting device, comprising:
a first nitride layer; a low-current blocking layer disposed on the first nitride layer, the low-current blocking layer comprising a multilayer structure; a light absorption layer disposed on the low-current blocking layer; and a Schottky junction layer disposed on the light-absorption layer. |
| 地址 |
Ansan-si KR |
