发明名称 |
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device. |
申请公布号 |
US2015086912(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201414554344 |
申请日期 |
2014.11.26 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
KAWABATA Takeshi;TSUBAKI Hideaki;TAKIZAWA Hiroo;YOKOKAWA Natsumi |
分类号 |
G03F7/038;C08F216/10;C08F220/30;C08F216/14 |
主分类号 |
G03F7/038 |
代理机构 |
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代理人 |
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主权项 |
1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
(P) a resin having a repeating unit (A) represented by the following formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation: wherein R1 represents a hydrogen atom, an alkyl group, a monovalent aliphatic hydrocarbon cyclic group, a halogen atom, a cyano group, or an alkoxycarbonyl group, each of Ar1 and Ar2 independently represents a divalent aromatic cyclic group, or a group formed by combining a divalent aromatic cyclic group and an alkylene group, each of X1 and X2 independently represents —O— or —S—, L1 represents an alkylene group, an alkenylene group, a divalent aliphatic hydrocarbon cyclic group, a divalent aromatic cyclic group, or a group formed by combining two or more of these groups, two or more groups combined in the group formed by combining two or more of these groups may be the same with or different from each other, and two or more groups combined may be linked via —O— or —S— as a linking group; and Z represents a site capable of becoming a sulfonic acid group, an imidic acid group or a methide acid group upon irradiation with an actinic ray or radiation. |
地址 |
Tokyo JP |