SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP1 formed on the substrate. The upper surface of the semiconductor layer EP1 is positioned higher than the upper surface of the substrate straight below the gate electrode GE. And, end parts of the gate electrode GE in a gate length direction are positioned on the semiconductor layer EP1.

主权项

1. A semiconductor device comprising
a MISFET including:
a substrate;a gate electrode formed on the substrate via a gate insulating film; anda first epitaxial layer for source/drain formed on the substrate, wherein a first insulating film is formed on the substrate so as to cover the first epitaxial layer, the gate electrode is buried in a first trench formed in the first insulating film, the first epitaxial layer has an upper surface positioned higher than an upper surface of the substrate straight below the gate electrode, and end parts of the gate electrode are positioned on the first epitaxial layer in a gate length direction of the MISFET.