发明名称 METHOD FOR FORMING RESIST PATTERN
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern having high heat resistance and high dry etching durability and showing excellent release property from a support body.SOLUTION: The method for forming a resist pattern includes: a step (1) of exposing a resist film formed by using a resist composition on a support body, and then patterning the resist film by developing to form a pre-pattern; and a step (2) of irradiating the pre-pattern with either or both of UV rays and visible rays to cure the pre-pattern. The step (2) includes an operation of irradiating the pre-pattern with light prepared by cutting off a wavelength region shorter than 300 nm from UV rays or visible rays.</p>
申请公布号 JP2015057633(A) 申请公布日期 2015.03.26
申请号 JP20140089626 申请日期 2014.04.23
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SHIMAI FUTOSHI;HOSODA HIROSHI;CHIBA MASAKI;MARUYAMA KENJI
分类号 G03F7/40 主分类号 G03F7/40
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