发明名称 |
THIN FILM SOLAR CELL |
摘要 |
A thin film solar cell includes a substrate, a first electrode and a second electrode positioned on one surface of the substrate, and a photoelectric conversion unit positioned between the first electrode and the second electrode. The photoelectric conversion unit includes a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer. At least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx). |
申请公布号 |
US2015083203(A1) |
申请公布日期 |
2015.03.26 |
申请号 |
US201314394642 |
申请日期 |
2013.04.02 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
Kim Soohyun;Lee Hongcheol;Chung Jinwon;Ahn Sehwon |
分类号 |
H01L31/0368;H01L31/077;H01L31/0376 |
主分类号 |
H01L31/0368 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film solar cell comprising:
a substrate; a first electrode and a second electrode positioned on one surface of the substrate; and a photoelectric conversion unit positioned between the first electrode and the second electrode, the photoelectric conversion unit including a plurality of photoelectric conversion layers each including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, wherein at least one of the p-type semiconductor layers of the plurality of photoelectric conversion layers contains microcrystalline silicon (mc-Si) and amorphous silicon oxide (a-SiOx). |
地址 |
Seoul KR |