发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
Provided is a substrate processing apparatus which deposits a film including a reaction product on a substrate by plurally repeating a supply cycle for sequentially supplying at least two kinds of reaction gas, reacting with each other within a container, to the surface of the substrate. The substrate processing apparatus includes a turntable provided in the container and having a concave portion for receiving the substrate formed on its surface and through-holes formed in the concave portion; a lifting mechanism including lift pins used when transferring the substrate placed on the concave portion; and a control part configured to control the lifting mechanism. The control part controls the lifting mechanism to carry the substrate out of the concave portion by moving the lifting pins upwards in a vertical direction and inwards in the radial direction of the turntable while the lifting pins are in contact with the substrate through the through-holes. |
申请公布号 |
KR20150032494(A) |
申请公布日期 |
2015.03.26 |
申请号 |
KR20140123453 |
申请日期 |
2014.09.17 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SATO KAORU;TAKAHASHI KIICHI |
分类号 |
H01L21/205;H01L21/677;H01L21/683 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|