METHODS OF FORMING HYDROPHOBIC SURFACES ON SEMICONDUCTOR DEVICE STRUCTURES, METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND SEMICONDUCTOR DEVICE STRUCTURES

摘要

A method of forming a hydrophobic surface on a semiconductor device structure. The method comprises forming at least one structure having at least one exposed surface comprising titanium atoms. The at least one exposed surface of at least one structure is contacted with at least one of an organo-phosphonic acid and an organo-phosphoric acid to form a material having a hydrophobic surface on the at least one exposed surface of the least one structure. A method of forming a semiconductor device structure and a semiconductor device structure are also described.

主权项

1. A method of forming a hydrophobic surface on a semiconductor device structure, the method comprising:
forming adjacent structures comprising at least one of a titanium material, a zirconium material, and a hafnium material over a substrate, each of the adjacent structures comprising sidewalls and including an opening between the sidewalls; and forming a material having a hydrophobic surface on the sidewalls of each of the adjacent structures and extending from a retaining structure proximate an upper portion of each of the adjacent structures to the substrate.