Methods and Apparatus for ESD Structures

摘要

Methods and apparatus for ESD structures. A semiconductor device includes a first active area containing an ESD cell coupled to a first terminal and disposed in a well; a second active area in the semiconductor substrate, the second active area comprising a first diffusion of the first conductivity type for making a bulk contact to the well; and a third active area in the semiconductor substrate, separated from the first and second active areas by another isolation region, a portion of the third active area comprising an implant diffusion of the first conductivity type within a first diffusion of the second conductivity type and adjacent a boundary with the well of the first conductivity type; wherein the third active area comprises a diode coupled to the terminal and reverse biased with respect to the well of the first conductivity type.

主权项

1. A semiconductor device comprising:
a substrate of a first conductivity type; a first active area in the substrate containing an ESD cell coupled to a first terminal and disposed in a well of the first conductivity type; a second active area in the substrate, the second active area separated from the first active area by an one or more isolation regions, the second active area comprising a first highly-doped region of the first conductivity type; and a third active area in the substrate, the third active area separated from the first and second active areas by one or more isolation regions, the third active area comprising a reverse-biased diode, the reverse-biased diode comprising a first lightly-doped region of the first conductivity type and a second highly-doped region of a second conductivity type.