| 摘要 |
<p>A light emitting device according to an embodiment of the present invention includes: a first semiconductor layer, a second semiconductor layer, an active layer which is arranged between the first semiconductor layer and the second semiconductor layer, and an electron blocking layer which is arranged between the second semiconductor layer and the active layer and has band gap energy which is larger than the band gap energy of the active layer. Multiple step layers which include AlGaN and multiple intermediate layers which include GaN are alternately and repetitively stacked on the electron blocking layer. The band gap energy of the step layer near the active layer among the step layers is smaller than the band gap energy of the other step layers.</p> |
