INSULATED-GATE FIELD-EFFECT TRANSISTOR,申请号CAD799642-传众专利搜索

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发明名称	INSULATED-GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号	CA799642(A)	申请公布日期	1968.11.19
申请号	CAD799642	申请日期
申请人	MATSUSHITA ELECTRONICS CORPORATION	发明人	TOMISABURO OKUMURA
分类号		主分类号
代理机构		代理人
主权项
地址

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