Method for manufacturing solid-state imaging device

摘要

Certain embodiments provide method for manufacturing a solid-state imaging device, including forming an electrode and forming a second impurity layer. The electrode is formed on a semiconductor substrate including a first impurity layer of a first conductivity type on a surface. The second impurity layer is a second conductivity type and is formed by implanting an impurity of a second conductivity type into the first impurity layer in an oblique direction with respect to the surface of the semiconductor substrate on the condition that the impurity penetrates an end portion of the electrode, based on a position of the electrode. The second impurity layer is bonded to the first impurity layer to constitute a photodiode, and a portion of the second impurity layer is disposed under the electrode.

主权项

1. A method for manufacturing a solid-state imaging device, comprising:
forming an electrode on a semiconductor substrate including a first impurity layer of a first conductivity type on a surface; forming a second impurity layer of a second conductivity type by implanting an impurity of the second conductivity type into the first impurity layer on the condition that the impurity penetrates an end portion of the electrode, based on a position of the electrode, so that the impurity of the second conductivity type travels in a first direction which is a diagonal direction toward the electrode, the second impurity layer being formed so that a portion of the second impurity layer is disposed under the electrode and the second impurity layer is bonded to the first impurity layer so as to compose a photodiode; and forming a third impurity layer of the first conductivity type at a position spaced apart from the electrode by implanting an impurity of a first conductivity type into the second impurity layer exposed from the electrode, based on a position of the electrode, so that the impurity of the first conductivity type travels in a second direction which is a diagonal direction away from the electrode, wherein the second impurity layer and the third impurity layer are formed so that a first potential of a region including the second impurity layer disposed under the electrode is a predetermined potential greater than a second potential of a region including the third impurity layer, and the first potential is adjusted by the first direction and an overlap area between the second impurity layer and the electrode.