Semiconductor device, method of manufacturing semiconductor device, and antenna switch module

摘要

Disclosed is a semiconductor device having a radio frequency switch. Also disclosed are an antenna switch module and a method of manufacturing the semiconductor device. The semiconductor device includes a metal wiring insulating film bonded to a silicon substrate. In the semiconductor device, a crystal defect layer extends into the silicon substrate from a surface of the silicon substrate. Crystal defects are throughout the crystal defect layer. The semiconductor device and an integrated circuit are in the antenna switch module. The integrated circuit in the antenna switch module is mounted with the radio-frequency switch device and the silicon substrate. The method of manufacturing the semiconductor device includes a step of forming crystal defects throughout a silicon substrate. Radiation or a diffusion is used to form the crystal defects. After the step of forming the crystal defects, the method includes a step of implanting ions into a surface of the silicon substrate to form a crystal defect layer.

主权项

1. A semiconductor device having a radio frequency switch, the semiconductor device comprising:
a metal wiring insulating film bonded to a silicon substrate; a first crystal defect layer extending into the silicon substrate from a surface of the silicon substrate, crystal defects formed throughout the first crystal defect layer; and an element separation layer between a buried oxide layer and the metal wiring insulating film, drain and source electrodes of a transistor being within the element separation layer.