发明名称 Radio-frequency device package and method for fabricating the same
摘要 The invention provides a radio-frequency (RF) device package and a method for fabricating the same. An exemplary embodiment of a radio-frequency (RF) device package includes a base, wherein a radio-frequency (RF) device chip is mounted on the base. The RF device chip includes a semiconductor substrate having a front side and a back side. A radio-frequency (RF) component is disposed on the front side of the semiconductor substrate. An interconnect structure is disposed on the RF component, wherein the interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure. A through hole is formed through the semiconductor substrate from the back side of the semiconductor substrate, and is connected to the interconnect structure. A TSV structure is disposed in the through hole.
申请公布号 US8987851(B2) 申请公布日期 2015.03.24
申请号 US201313790060 申请日期 2013.03.08
申请人 MediaTek Inc. 发明人 Yang Ming-Tzong;Hung Cheng-Chou;Lee Tung-Hsing;Huang Wei-Che;Huang Yu-Hua
分类号 H01L27/14;H01L29/40;H01L21/76;H01L23/522;H01L31/18;H01L23/48;H01L23/00 主分类号 H01L27/14
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A radio-frequency (RF) device package, comprising: a base; and a radio-frequency (RF) device chip mounted on the base, wherein the RF device chip comprises: a semiconductor substrate having a front side and a back side; a radio-frequency (RF) component disposed on the front side of the semiconductor substrate; an interconnect structure disposed on the RF component, wherein the interconnect structure is electrically connected to the RF component, and a thickness of the semiconductor substrate is less than that of the interconnect structure; a through hole formed through the semiconductor substrate from the back side of the semiconductor substrate, connecting to the interconnect structure; and a TSV structure disposed in the through hole.
地址 Hsin-Chu TW