| 发明名称 | Optoelectronic device and method for manufacturing the same | ||
| 摘要 | A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate, wherein the supporting layer is formed before forming the plurality of first modified regions; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of first modified regions. | ||
| 申请公布号 | US8987752(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201313896570 | 申请日期 | 2013.05.17 |
| 申请人 | Epistar Corporation | 发明人 | Ho Cheng Hsiang;Chen Biau-Dar;Chi Liang Sheng;Chen Chun Chang;Fang Pei Shan |
| 分类号 | H01L27/15;H01L29/26;H01L31/12;H01L33/00;H01L33/26;B23K26/00;H01L33/20 | 主分类号 | H01L27/15 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming a supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing a first energy into the substrate, wherein the supporting layer is formed before forming the plurality of first modified regions; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of first modified regions. | ||
| 地址 | Hsinchu TW | ||