Operating method of a nonvolatile memory device

摘要

An operating method of a multi-bit-per-cell nonvolatile memory device, e.g., first and second variable resistance memory cells connected to one of word lines. The operating method may include receiving first to fourth data sequentially, providing a first program current to the first variable resistance memory cell to program the first and second data to the first variable resistance memory cell, and providing a second program current to the second variable resistance memory cell to program the third and fourth data to the second variable resistance memory cell after verifying whether an actual resistance of the programmed first variable resistance memory cell is within an intended resistance distribution.

主权项

1. A method of operating a nonvolatile memory device including first and second variable resistance memory cells connected to one of word lines, the method comprising:
receiving first to fourth data sequentially; providing a first program current to the first variable resistance memory cell to program the first and second data to the first variable resistance memory cell; and providing a second program current to the second variable resistance memory cell to program the third and fourth data to the second variable resistance memory cell after verifying whether an actual resistance of the programmed first variable resistance memory cell resides in an intended resistance distribution.