Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same

摘要

The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

主权项

1. A method of manufacturing a flat panel display device, comprising:
forming an amorphous silicon layer; and crystallizing the amorphous silicon layer with a laser to form a polysilicon film, wherein irradiated energy of the laser on the amorphous silicon layer in an active channel region of a pixel portion is smaller than irradiated energy of the laser on the amorphous silicon layer in an active channel region of a driving circuit portion, wherein grain sizes in the active channel region of the pixel portion have a greater uniformity than grain sizes in the active channel region of the driving circuit portion.