| 发明名称 | Semiconductor memory device including a slit | ||
| 摘要 | A semiconductor device includes a first conductive layer, at least one first slit through the first conductive layer, and configured to divide the first conductive layer in the unit of a memory block, second conductive layers stacked on the first conductive layer, and a second slit through the second conductive layers at a different location from the first slit and configured to divide the second conductive layers in the unit of the memory block. | ||
| 申请公布号 | US8987908(B2) | 申请公布日期 | 2015.03.24 |
| 申请号 | US201313846461 | 申请日期 | 2013.03.18 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Ki Hong;Pyi Seung Ho;Park In Su |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L27/115;H01L29/792;H01L23/522 | 主分类号 | H01L23/48 |
| 代理机构 | William Park & Associates Patent Ltd. | 代理人 | William Park & Associates Patent Ltd. |
| 主权项 | 1. A semiconductor device comprising: a first conductive layer; at least one first slit through the first conductive layer, and configured to divide the first conductive layer in the unit of a memory block; second conductive layers stacked on the first conductive layer; a second slit through the second conductive layers at a different location from the first slit and configured to divide the second conductive layers in the unit of the memory block; at least one third conductive layer formed in the first conductive layer; and at least one third slit located in a cell area of respective memory blocks and configured to have a depth to pass through the third conductive layer. | ||
| 地址 | Gyeonggi-do KR | ||