发明名称 |
High thermal performance packaging for optoelectronics devices |
摘要 |
A novel submount for the efficient dissipation of heat away from a semiconductor light emitting device is described, which also maintains efficient electrical conductivity to the n and p contacts of the device by separating the thermal and electrical conductivity paths. The submount comprises at least the following constituent layers: a substrate (400) with thermally conductive properties; a deposited layer (402) having electrically insulating and thermally conducting properties disposed on at least a region of the substrate having a thickness of between 50 nm and 50 microns; a patterned electrically conductive circuit layer (404) disposed on at least a region of the deposited layer; and, a passivation layer at least partially overcoating a top surface of the submount. Also described is a light emitting module employing the substrate and a method of manufacture of the submount. |
申请公布号 |
US8987769(B2) |
申请公布日期 |
2015.03.24 |
申请号 |
US200812674553 |
申请日期 |
2008.08.22 |
申请人 |
Photonstar LED Limited |
发明人 |
McKenzie James Stuart;Zoorob Majd |
分类号 |
H01L29/72;H05K1/05;H01L33/64;H05K3/38 |
主分类号 |
H01L29/72 |
代理机构 |
Renner, Otto, Boisselle & Sklar, LLP |
代理人 |
Renner, Otto, Boisselle & Sklar, LLP |
主权项 |
1. A submount for the attachment of a semiconductor device, the submount having heat dissipating and thermal conducting properties and at least the following constituent layers:
a substrate formed of a material with thermal conductivity greater than 130 W/(m.K); an isolation layer disposed on at least a region of the substrate, wherein the isolation layer is conformal with the substrate and is formed with controlled stress using a low temperature deposition technique, where the isolation layer has a thickness of between 50 nm and 50 microns and comprises an electrically insulating material with an electrical breakdown voltage of at least 0.5kV and a thermal conductivity greater than 130 W/(m.K); and a patterned electrically conductive circuit layer disposed on at least a region of the isolation layer. |
地址 |
Hants GB |