发明名称 High thermal performance packaging for optoelectronics devices
摘要 A novel submount for the efficient dissipation of heat away from a semiconductor light emitting device is described, which also maintains efficient electrical conductivity to the n and p contacts of the device by separating the thermal and electrical conductivity paths. The submount comprises at least the following constituent layers: a substrate (400) with thermally conductive properties; a deposited layer (402) having electrically insulating and thermally conducting properties disposed on at least a region of the substrate having a thickness of between 50 nm and 50 microns; a patterned electrically conductive circuit layer (404) disposed on at least a region of the deposited layer; and, a passivation layer at least partially overcoating a top surface of the submount. Also described is a light emitting module employing the substrate and a method of manufacture of the submount.
申请公布号 US8987769(B2) 申请公布日期 2015.03.24
申请号 US200812674553 申请日期 2008.08.22
申请人 Photonstar LED Limited 发明人 McKenzie James Stuart;Zoorob Majd
分类号 H01L29/72;H05K1/05;H01L33/64;H05K3/38 主分类号 H01L29/72
代理机构 Renner, Otto, Boisselle & Sklar, LLP 代理人 Renner, Otto, Boisselle & Sklar, LLP
主权项 1. A submount for the attachment of a semiconductor device, the submount having heat dissipating and thermal conducting properties and at least the following constituent layers: a substrate formed of a material with thermal conductivity greater than 130 W/(m.K); an isolation layer disposed on at least a region of the substrate, wherein the isolation layer is conformal with the substrate and is formed with controlled stress using a low temperature deposition technique, where the isolation layer has a thickness of between 50 nm and 50 microns and comprises an electrically insulating material with an electrical breakdown voltage of at least 0.5kV and a thermal conductivity greater than 130 W/(m.K); and a patterned electrically conductive circuit layer disposed on at least a region of the isolation layer.
地址 Hants GB