Method of forming spacers that provide enhanced protection for gate electrode structures

摘要

Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming a gate electrode structure above a semiconducting substrate and forming a plurality of spacers proximate the gate electrode structures, wherein the plurality of spacers comprises a first silicon nitride spacer positioned adjacent a sidewall of the gate electrode structure, a generally L-shaped silicon nitride spacer positioned adjacent the first silicon nitride spacer, and a silicon dioxide spacer positioned adjacent the generally L-shaped silicon nitride spacer.

主权项

1. A method, comprising:
forming a gate electrode structure above a semiconducting substrate; forming a first non-L-shaped spacer adjacent to a sidewall of said gate electrode structure, said first non-L-shaped spacer comprising silicon nitride and having a vertical leg aligned with said sidewall but not having a horizontal leg extending laterally away from said sidewall; after forming said first non-L-shaped spacer, forming an L-shaped spacer comprising silicon nitride and having a vertical leg portion that is formed on and in direct physical contact with said vertical leg of said first non-L-shaped spacer and having a horizontal leg portion that is formed on and in direct physical contact with said semiconducting substrate and extends laterally away from said sidewall; forming a second non-L-shaped spacer comprising silicon dioxide and having a vertical leg aligned with said sidewall but not having a horizontal leg extending laterally away from said sidewall, wherein said vertical leg of said second non-L-shaped spacer is formed on and in direct physical contact with said vertical and horizontal leg portions of said L-shaped spacer and a total lateral width of said L-shaped spacer is defined by a combined thickness of said vertical leg portion of said L-shaped spacer and a thickness at a base of said vertical leg of said second non-L-shaped spacer; and performing a dry isotropic etching process to remove said second non-L-shaped spacer while leaving said L-shaped spacer and said first non-L-shaped spacer in position.