Semiconductor device and method of manufacturing the semiconductor device

摘要

An interlayer insulating film is formed. Then a first gate electrode and a second gate electrode are buried in the interlayer insulating film. Then, an anti-diffusion film is formed over the interlayer insulating film, over the first gate electrode, and over the second gate electrode. Then, a first semiconductor layer is formed over the anti-diffusion film which is present over the first gate electrode. Then, an insulating cover film is formed over the upper surface and on the lateral side of the first semiconductor layer and over the anti-diffusion film. Then, a semiconductor film is formed over the insulating cover film. Then, the semiconductor film is removed selectively to leave a portion positioned over the second gate electrode, thereby forming a second semiconductor layer.

主权项

1. A semiconductor device comprising:
a multilayer interconnect layer having a first interconnect layer and a second interconnect layer positioned over the first interconnect layer; and a first transistor and a second transistor formed by using the first interconnect layer, wherein the first transistor includes: a first gate electrode buried in the first interconnect layer; a first gate insulating film positioned over the first gate electrode; a first semiconductor layer positioned over the first gate insulating film; and an insulating cover film positioned below the second interconnect layer and covering the upper surface and the lateral side of the first semiconductor layer, and wherein the second transistor includes: a second gate electrode buried in the first interconnect layer; a second gate insulating film positioned over the second gate electrode; and a second semiconductor layer positioned over the second gate insulating film, positioned at least partially above the insulating cover film and formed of a material different from that of the first semiconductor layer.