SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which uses a GaN-based semiconductor and has improved reliability.SOLUTION: A semiconductor device comprises: a GaN-based semiconductor layer 12 in which a surface has an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane; a first electrode 14 which is provided on a surface and has a first end; and a second electrode 16 which is provided on the surface at a distance from the first electrode 14 and has a second end opposite to the first end, in which a direction of a line linking any point of the first end and any point of the second end is different from a c-axis direction of the GaN-based semiconductor layer.