| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method which allows a wafer on which devices are formed by functional layers laminated on a surface of a substrate to be divided along a plurality of scheduled division lines for partitioning the devices without the occurrence of peeling of the functional layer on the device side.SOLUTION: A wafer processing method of dividing along a plurality of streets for partitioning the devices, a wafer in which devices are formed by functional layers laminated on a surface of a substrate and an SiO2 layer covers the surface of the functional layers comprises: a functional layer removal process of irradiating with laser beams of a wavelength having high absorptance by stretching vibration of O-H bond or C-H bond which remains in the SiO2 film to remove the functional layers along scheduled division lines; and a wafer division process of performing division processing on the substrate along the scheduled division lines from which the functional layers are removed to divide the wafer into individual devices. |
