发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has good adhesion between a semiconductor substrate and a metal film and small electrical contact resistance; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a device structure on a surface of a semiconductor substrate 11; attaching the surface to a support substrate and grinding a rear face of the semiconductor substrate to thin the semiconductor substrate; forming grooves 12b on the rear face of the semiconductor substrate in a meshed pattern by performing etching on the rear face of the semiconductor substrate by using a resist pattern as a mask; and removing the resist pattern and subsequently depositing metal on the rear face of the semiconductor substrate by sputtering. |
申请公布号 |
JP2015056533(A) |
申请公布日期 |
2015.03.23 |
申请号 |
JP20130189428 |
申请日期 |
2013.09.12 |
申请人 |
TOSHIBA CORP |
发明人 |
TAKANO MASAMUNE |
分类号 |
H01L21/28;H01L21/336;H01L29/417;H01L29/739;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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