发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which has good adhesion between a semiconductor substrate and a metal film and small electrical contact resistance; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a device structure on a surface of a semiconductor substrate 11; attaching the surface to a support substrate and grinding a rear face of the semiconductor substrate to thin the semiconductor substrate; forming grooves 12b on the rear face of the semiconductor substrate in a meshed pattern by performing etching on the rear face of the semiconductor substrate by using a resist pattern as a mask; and removing the resist pattern and subsequently depositing metal on the rear face of the semiconductor substrate by sputtering.
申请公布号 JP2015056533(A) 申请公布日期 2015.03.23
申请号 JP20130189428 申请日期 2013.09.12
申请人 TOSHIBA CORP 发明人 TAKANO MASAMUNE
分类号 H01L21/28;H01L21/336;H01L29/417;H01L29/739;H01L29/78 主分类号 H01L21/28
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