发明名称 METHOD FOR FORMING FILM CONTAINING MANGANESE
摘要 A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.
申请公布号 KR20150031239(A) 申请公布日期 2015.03.23
申请号 KR20147034765 申请日期 2013.06.12
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO KENJI;MAEKAWA KAORU;HAMADA TATSUFUMI;NAGAI HIROYUKI
分类号 H01L21/02;H01L21/285;H01L21/768 主分类号 H01L21/02
代理机构 代理人
主权项
地址