发明名称 |
METHOD FOR FORMING FILM CONTAINING MANGANESE |
摘要 |
A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film. |
申请公布号 |
KR20150031239(A) |
申请公布日期 |
2015.03.23 |
申请号 |
KR20147034765 |
申请日期 |
2013.06.12 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;MAEKAWA KAORU;HAMADA TATSUFUMI;NAGAI HIROYUKI |
分类号 |
H01L21/02;H01L21/285;H01L21/768 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|