| 摘要 |
<p>The present invention relates to a group III nitride semiconductor stacked body comprising: an m-plane substrate; a growth-prevention area, on the m-plane substrate, having a plurality of windows in which group III nitride semiconductors grow; and a group III nitride semiconductor layer which is a coalescence of growth from two neighboring windows, and which has cavities formed prior to the coalescence, wherein the cross-sections of the cavities differ from the cross-sections which form during the growth of the group III nitride semiconductor layer.</p> |
