ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.