| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can achieve stable characteristics against a change in temperature.SOLUTION: A semiconductor device according to an embodiment includes a first semiconductor region, a second semiconductor region and a third semiconductor region. The first semiconductor region includes silicon carbide. A conductivity type of the first semiconductor region is a first conductivity type. The second semiconductor region includes silicon carbide. A conductivity type of the second semiconductor region is a second conductivity type. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region includes silicon carbide. A conductivity type of the third semiconductor region is a second conductivity type. The third semiconductor region is provided between the first semiconductor region and the second semiconductor region. When viewed in a direction which links the first semiconductor region and the second semiconductor region, an area of a region where the second semiconductor region and the third semiconductor region overlap each other is smaller than an area where the first semiconductor region and the second semiconductor region overlap each other. |
