| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing method capable of performing fine treatment for a main surface of a substrate by using a heater without giving damages to the main surface, and a substrate processing apparatus.SOLUTION: A substrate processing method comprises: a liquid film keeping step for keeping a SPM liquid film on a surface of a wafer W; a first heater heating step in a step S31 for heating the SPM liquid film by setting the output of heater 54 arranged so as to be opposed to the surface of the wafer W as a first output in parallel with the liquid film keeping step; and a second heater heating step in the step S32 for heating the SPM liquid film by changing the output of the heater 54 to a second output being lower than the first output after the first heater heating step in the step S31 in parallel with the liquid film keeping step. |
