| 摘要 |
<p>The method involves making an aperture forming an access to a layer of sacrificial material (106) provided between a layer of electric insulating material (108) and a reflective layer (104) able to reflect electromagnetic wave, through the layer of electric insulating material within pixels, where each pixel includes an antenna (117a) to pick up the electromagnetic wave received at the pixel. A part of the layer of sacrificial material is removed from the aperture. An optical cavity is formed between the reflective layer and the layer of electric insulating material. The sacrificial material is silicon and/or germanium. The layer of electrically insulating material comprises semiconductor oxide e.g. silicon dioxide (SiO2). The layer of electric insulating material is a dielectric layer. The reflective layer is metallic, silicon-based and aluminum-based reflective layers.</p> |
