MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a magnetic memory device having excellent reliability and a manufacturing method thereof. A method for manufacturing a magnetic memory device comprises: forming a magnetic tunnel junction layer on a circuit board; forming mask patterns on the magnetic tunnel junction layer; and forming an isolation region in the magnetic tunnel junction layer by sequentially performing a plurality of ion injection processes using the mask patterns through an ion injection mask. The isolation region defines magnetic tunnel junction elements individually arranged under the mask patterns.