发明名称 |
TILT IMPLANTATION FOR FORMING FINFETS |
摘要 |
Methods for fabrication of fin devices for an integrated circuit are provided. Fin structures are formed in a semiconductor material, where the fin structures include sidewalls and tops. Dopant implantation is performed at a tilt angle to form a doped region along the sidewalls and the tops of the fin structures, where the semiconductor material is maintained at an elevated temperature during the dopant implantation. The elevated temperature prevents amorphization of the fin structures during the dopant implantation. A field effect transistor is formed from the fin structures. The field effect transistor has a threshold voltage that is based on the dopant implantation. |
申请公布号 |
US2015079750(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201314029848 |
申请日期 |
2013.09.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
WANG Tsan-Chun;FANG Zi-Wei;LEE Tze-Liang |
分类号 |
H01L29/66;H01L21/265 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Hsinchu TW |