| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal. |
| 申请公布号 |
US2015076699(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414204203 |
申请日期 |
2014.03.11 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Sasaki Yo;Hisazato Yuuji;Kodani Kazuya;Yamamoto Atsushi;Matsumura Hitoshi |
| 分类号 |
H01L23/48;H01L23/00 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor element; an interconnection layer including Cu; and a bonding layer including a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer, a melting point of the first alloy being higher than a melting point of the first metal. |
| 地址 |
Tokyo JP |
