NONVOLATILE MEMORY DEVICES HAVING A THREE DIMENSIONAL STRUCTURE

摘要

Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device may include cell arrays having a plurality of conductive patterns having a line shape three dimensionally arranged on a semiconductor substrate, the cell arrays being separated from one another; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; common source regions provided in the semiconductor substrate under a lower portion of the semiconductor patterns in a direction in which the conductive patterns extend; a first impurity region provided in the semiconductor substrate so that the first impurity region extends in a direction crossing the conductive patterns to electrically connect the common source regions; and a first contact hole exposing a portion of the first impurity region between the separated cell arrays.

主权项

1. A nonvolatile memory device comprising:
cell arrays having a plurality of conductive patterns that are sequentially stacked on a semiconductor substrate, the cell arrays being separated from each other; semiconductor patterns extending from the semiconductor substrate to cross sidewalls of the conductive patterns; a first impurity region provided in the semiconductor substrate, wherein the first impurity region includes portions which are vertically overlapped with the cell arrays; a second impurity region provided in the semiconductor substrate, wherein the second impurity region has a different conductivity type from the first impurity region and includes at least a portion which is provided between the separated cell arrays; a first contact plug connected to the first impurity region; and a second contact plug provided on the substrate between the separated cell arrays and connected to the at least a portion of the second impurity region.