发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 According to one embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes. The stacked body includes a light emitting layer. The first and second electrodes are provided on the stacked body. The device further includes an insulating layer covering the stacked body, a first conversion electrode electrically connected to the first electrode, a second conversion electrode electrically connected to the second electrode (50), and a light blocking body covering a side surface of the stacked body. The first conversion electrode, the second conversion electrode, and the light blocking body include, in a portion contacting with the insulating layer, a member with a reflectance of 80 percent or more for light emitted from the light emitting layer.
申请公布号 US2015076546(A1) 申请公布日期 2015.03.19
申请号 US201414445261 申请日期 2014.07.29
申请人 Kabushiki Kaisha Toshiba 发明人 OBATA Susumu;Fujii Takayoshi;Higuchi Kazuhito;Kojima Akihiro
分类号 H01L33/40;H01L33/42;H01L33/50 主分类号 H01L33/40
代理机构 代理人
主权项 1. A semiconductor light emitting device comprising: a stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer: a first portion of the stacked body including: a part of the first semiconductor layer of a first conductivity type;the light emitting layer provided on the part of the first semiconductor layer; andthe second semiconductor layer provided on the light emitting layer; anda second portion of the stacked body provided next to the first portion and including another part of the first semiconductor layer; a first electrode provided on the first portion; a second electrode provided on the second portion on the same side of the stacked body as the first electrode provided; an insulating layer covering the stacked body on the side where the first electrode and the second electrode are provided, the insulating layer covering a side surface around the stacked body; a first conversion electrode provided on the insulating layer and electrically connected to the first electrode; a second conversion electrode provided next to the first conversion electrode on the insulating layer and electrically connected to the second electrode; and a light blocking body provided on the side surface of the stacking body via the insulating layer, and surrounding the first conversion electrode and the second conversion electrode, the first conversion electrode, the second conversion electrode, and the light blocking body including, in a portion contacting with the insulating layer, a member having a reflectance of 80 percent or more for light emitted from the light emitting layer.
地址 Minato-ku JP