NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device includes a laminate body, a first electrode, a second electrode, and a phosphor layer having a light emitting surface. The laminate body includes a first layer of a first-conductivity-type, a first part of a second layer of a second-conductivity-type, and a light emitting layer containing a nitride semiconductor between the first layer and the second layer. The first electrode is formed on a surface of the first layer. The second electrode is formed on a surface of a second part of the second layer that is formed between the laminate body and the phosphor layer. At least one of the laminate body, the second part of the second layer, and the phosphor layer has a lateral width that increase toward the light emitting surface.

主权项

1. A light emitting device comprising:
a laminate body including a first layer having a first-conductivity type, a first part of a second layer having a second-conductivity type, and a light emitting layer containing a nitride semiconductor between the first layer and the second layer; a phosphor layer having a light emitting surface; a second part of the second layer between the phosphor layer and the laminate body; a first electrode formed on a surface of the first layer; and a second electrode formed on a surface of the second part of the second layer, wherein at least one of the laminate body, the second part of the second layer, and the phosphor layer widens toward the light emitting surface.