PIXEL ISOLATION STRUCTURES IN BACKSIDE ILLUMINATED IMAGE SENSORS

摘要

Systems and methods are provided for fabricating a backside illuminated image sensor including an array of pixels. An example image sensor includes a first pixel, a second pixel, and an isolation structure. The first pixel is disposed in a front side of a substrate and is configured to generate charged carriers in response to light incident upon a backside of the substrate. The second pixel is disposed in the front side of the substrate and is configured to generate charged carriers in response to light incident upon the backside of the substrate. The isolation structure is disposed to separate the second pixel from the first pixel, and extends from the backside of the substrate toward the front side of the substrate. The isolation structure includes a sidewall substantially vertically to the front side of the substrate.

主权项

1. A backside illuminated image sensor including an array of pixels, comprising:
a first pixel disposed in a front side of a substrate and configured to generate charged carriers in response to light incident upon a backside of the substrate; a second pixel disposed in the front side of the substrate and configured to generate charged carriers in response to light incident upon the backside of the substrate; and an anti-reflective layer on the backside of the substrate; and a first isolation structure disposed to separate the second pixel from the first pixel, the first isolation structure extending from the backside of the substrate toward the front side of the substrate, wherein the first isolation structure includes a first sidewall substantially vertically to the front side of the substrate, wherein the first isolation structure separates a region of the anti-reflective layer corresponding to the first pixel and another region of the anti-reflective layer corresponding to the second pixel.