| 发明名称 |
TRANSISTOR AND FABRICATION METHOD THEREOF |
| 摘要 |
A transistor is provided. The transistor includes a substrate, a gate electrode formed on the substrate, and multiple floating gates formed on the substrate. A fixed distance is designed between the adjacent floating gates. Wherein, the substrate, the multiple floating gates, and the gate electrode are separated by a plurality of active regions. |
| 申请公布号 |
US2015076582(A1) |
申请公布日期 |
2015.03.19 |
| 申请号 |
US201414194875 |
申请日期 |
2014.03.03 |
| 申请人 |
National Tsing Hua University |
发明人 |
Lin Chrong-Jung;King Ya-Chin |
| 分类号 |
H01L29/78;H01L29/66;H01L29/788 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor, comprising:
a substrate; a gate electrode forming on the substrate; and multiple floating gates formed on the substrate, and a fixed distance forms between each floating gate; wherein, the substrate, the multiple floating gates, and the gate electrode are separated by a plurality of active regions. |
| 地址 |
Hsinchu TW |
