发明名称 SOLID-STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME, AND IMAGING SYSTEM
摘要 A solid-state imaging apparatus improving a read-out speed and a noise-reduction rate comprises: a photoelectric conversion portion configured to convert light into an electric charge; a floating diffusion portion configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge converted by the photoelectric conversion portion to the floating diffusion portion; an amplifying transistor configured to amplify the voltage of the floating diffusion portion; a selecting transistor configured to output the voltage amplified by the amplifying transistor to an output line; and a switch provided between the output line and a current source, wherein the selecting transistor and the switch are held at an OFF state, during a period of a transition of the transfer transistor from an OFF state to an ON state and during a period of a transition of the transfer transistor from the ON state to the OFF state.
申请公布号 US2015077605(A1) 申请公布日期 2015.03.19
申请号 US201414470141 申请日期 2014.08.27
申请人 CANON KABUSHIKI KAISHA 发明人 Takada Hideaki;Ono Toshiaki
分类号 H04N5/3745;H04N5/357 主分类号 H04N5/3745
代理机构 代理人
主权项 1. A solid-state imaging apparatus comprising: a photoelectric conversion portion configured to converting light into an electric charge; a floating diffusion portion configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge converted by the photoelectric conversion portion to the floating diffusion portion; an amplifying transistor configured to amplify the voltage of the floating diffusion portion; a selecting transistor configured to output the voltage amplified by the amplifying transistor to an output line; and a switch provided between the output line and a current source, wherein the selecting transistor and the switch are held at an OFF state, during a period of a transition of the transfer transistor from an OFF state to an ON state, and during a period of a transition of the transfer transistor from the ON state to the OFF state.
地址 Tokyo JP