发明名称 |
SOLID-STATE IMAGING APPARATUS, METHOD FOR DRIVING THE SAME, AND IMAGING SYSTEM |
摘要 |
A solid-state imaging apparatus improving a read-out speed and a noise-reduction rate comprises: a photoelectric conversion portion configured to convert light into an electric charge; a floating diffusion portion configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge converted by the photoelectric conversion portion to the floating diffusion portion; an amplifying transistor configured to amplify the voltage of the floating diffusion portion; a selecting transistor configured to output the voltage amplified by the amplifying transistor to an output line; and a switch provided between the output line and a current source, wherein the selecting transistor and the switch are held at an OFF state, during a period of a transition of the transfer transistor from an OFF state to an ON state and during a period of a transition of the transfer transistor from the ON state to the OFF state. |
申请公布号 |
US2015077605(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
US201414470141 |
申请日期 |
2014.08.27 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Takada Hideaki;Ono Toshiaki |
分类号 |
H04N5/3745;H04N5/357 |
主分类号 |
H04N5/3745 |
代理机构 |
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代理人 |
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主权项 |
1. A solid-state imaging apparatus comprising:
a photoelectric conversion portion configured to converting light into an electric charge; a floating diffusion portion configured to convert the electric charge into a voltage; a transfer transistor configured to transfer the electric charge converted by the photoelectric conversion portion to the floating diffusion portion; an amplifying transistor configured to amplify the voltage of the floating diffusion portion; a selecting transistor configured to output the voltage amplified by the amplifying transistor to an output line; and a switch provided between the output line and a current source, wherein the selecting transistor and the switch are held at an OFF state, during a period of a transition of the transfer transistor from an OFF state to an ON state, and during a period of a transition of the transfer transistor from the ON state to the OFF state. |
地址 |
Tokyo JP |