发明名称 Tunneling-junction solar cell with shallow counter doping layer in the substrate
摘要 <p>One embodiment of the present invention provides a tunneling-junction solar cell. The solar cell includes a base layer, an emitter layer situated adjacent to the shallow counter doping layer, a surface field layer situated adjacent to a side of the base layer opposite to the shallow counter doping layer, a front-side electrode, and a back-side electrode. The base layer includes a shallow counter doping layer having a conduction doping type that is opposite to a remainder of the base layer. The emitter layer has a bandgap that is wider than that of the base layer.</p>
申请公布号 AU2013309484(A1) 申请公布日期 2015.03.19
申请号 AU20130309484 申请日期 2013.06.24
申请人 SILEVO, INC. 发明人 XIE, ZHIGANG;HENG, JIUNN BENJAMIN;FU, JIANMING;XU, ZHENG
分类号 H01L31/0747;H01L31/072 主分类号 H01L31/0747
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