发明名称 |
Tunneling-junction solar cell with shallow counter doping layer in the substrate |
摘要 |
<p>One embodiment of the present invention provides a tunneling-junction solar cell. The solar cell includes a base layer, an emitter layer situated adjacent to the shallow counter doping layer, a surface field layer situated adjacent to a side of the base layer opposite to the shallow counter doping layer, a front-side electrode, and a back-side electrode. The base layer includes a shallow counter doping layer having a conduction doping type that is opposite to a remainder of the base layer. The emitter layer has a bandgap that is wider than that of the base layer.</p> |
申请公布号 |
AU2013309484(A1) |
申请公布日期 |
2015.03.19 |
申请号 |
AU20130309484 |
申请日期 |
2013.06.24 |
申请人 |
SILEVO, INC. |
发明人 |
XIE, ZHIGANG;HENG, JIUNN BENJAMIN;FU, JIANMING;XU, ZHENG |
分类号 |
H01L31/0747;H01L31/072 |
主分类号 |
H01L31/0747 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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